Si wafer (100), 3 "dia x0.38 mm, 1sp, N type, As-doped, R:0.001-0.005 ohm.cm YSZ (Yittrium stabilized ZrO2) Face Orientation: (100) +/- 0

Face Orientation:                        (100) +/- 0

Current Collector (Substrate) Aluminum foil Cathode material LiNiCoMnO2 Dimensions 670mm(L) x 56mm(W) x 0

All pressing dies are made by high-stretched carbon steel to achieve high hardness to meet essential requirements of making ceramic or metal samples

It may be worth testing the two types of crystals when commencing new thin film processes

9% purity any inert gas (Nitrogen

Si wafer (100), 3 "dia x0.38 mm, 1sp, N type, As-doped, R:0.001-0.005 ohm.cm YSZ (Yittrium stabilized ZrO2) Face Orientation: (100) +/- 0Single crystal Si Conductivity: N type ( As doped) Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 38 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing